| PART |
Description |
Maker |
| 2N5088 |
Amplifier transistor. Collector-emitter voltage: Vceo = 30V. Collector-base voltage: Vcbo = 35V. Collector dissipation: Pc(max) = 625mW.
|
USHA India LTD
|
| 2N6515 |
High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW.
|
USHA India LTD
|
| 2SD1007 |
High collector to emitter voltage: VCEO 120V.Collector-base voltage VCBO 120 V
|
TY Semiconductor Co., Ltd
|
| 2SA1182 |
SOT-23 package Collector-base voltage VCBO -35 V
|
TY Semiconductor Co., Ltd
|
| 2SD1249 |
High collector-base voltage (Emitter open) VCBO
|
TY Semiconductor Co., Ltd
|
| 2SD1101 |
Low Frequency amplifier. Collector-base voltage VCBO 25 V
|
TY Semiconductor Co., Ltd
|
| BCX71G |
PNP Epitaxial Silicon Transistor Collector-base voltage VCBO -45 V
|
TY Semiconductor Co., Ltd
|
| 2SB1002 |
Low frequency power amplifier Collector to base voltage VCBO -70 V
|
TY Semiconductor Co., Ltd
|
| 2SB1001 |
Low frequency power amplifier Collector to base voltage VCBO -20 V
|
TY Semiconductor Co., Ltd
|
| 2SA1257 |
High breakdown voltage. Small output capacitance.Collector-base voltage VCBO -180 V
|
TY Semiconductor Co., Ltd
|
| 2SC4446 |
Very small-sized package High VEBO.Collector-base voltage VCBO 60 V
|
TY Semiconductor Co., Ltd
|
